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2SC5706
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
Features:
* Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation
D-PAK(TO-252)
Mechanical Data:
* Case : Molded Plastic * Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(Ta=25C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Base Current Total Device Disspation TA = 25C TC = 25C Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC(DC) IC(Pulse) IB PD Tj Tstg Value 80 80 50 6 5 7.5 1.2 0.8 15 +150 -55 to +150 Unit V V V V A A W C C
Device Marking
2SC5706 = 5706
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2SC5706
ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=10A, IE=0 Collector-Emitter Breakdown Voltage IC=100A, RBE=0 Collector-Emitter Breakdown Voltage IC=1mA, RBE= Emitter-Base Breakdown Voltage IE=10A, IC=0 Collector Cut-Off Current VCB=40V, IE=0 Emitter-Cut-Off Current VEB=4V, IC=0 Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO Min 80 80 50 6 Max Max 1 1 Unit V V V V A A
ON CHARACTERISTICS(1) DC Current Gain VCE=2V, IC=500mA Collector-Emitter Saturation Voltage IC=1A, IB=50mA IC=2A, IB=100mA Base-Emitter Saturation Voltage IC=2A, IB=100mA Note 1.Pulse Test : Pulse width < 300s, Duty cycle 20%. DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, IC=500 Output Capacitance VCB=10V, f=1MHz
hFE VCE(sat) VBE(sat)
200 -
-
560 135 240 1.2
mV V
fT Cob
-
400 15
-
MHz pF
SWITCHING TIMES See specified test circuit (Turn-On Time) See specified test circuit (Storage Time) See specified test circuit (Fall Time) ton tstg tf 35 300 20 ns
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2SC5706
Switching Time Test Circuit
PW=20s D.C. 1% INPUT VR 50 100F 470F IB1 IB2 RB + + OUTPUT
25
VBE=-5V
10IB1 = -10IB2 = IC = 1A
VCC=25V
Characteristics Curve
5
Collector Current, IC(A)
Collector Current, IC (A)
90m
4 3
8
A 0m
70mA
60mA 50mA 40mA 30mA 20mA
4.0 3.5 3.0 2.5 2.0 1.5
25C -25C Ta=7 5
VCE=2V
A
A
2 1 0
100m
10mA 5mA
1.0 0.5 0 0 0.2 0.4
IB=0 0 0.4 0.8 1.0 1.2 1.4
0.6
C
0.8
1.0
1.2
1.4
1000
Collector-to-Emitter Saturation Voltage, VCE(sat) (mV)
Collector-to-Emitter Voltage, VCE(V) FIG.1 IC - VCE
VCE=2V
Base-to-Emitter Voltage, VBE (V) FIG.2 IC - VBE
1000
DC Current Gain, hFE
Ta=75C 25C -25C
IC / IB = 20
100
100
= Ta
-25
75
C
C
25
C
10 0.01
Collector Current, IC (A) FIG.3 hFE - IC
0.1
1.0
10
10 0.01
0.1
1.0
10
Collector Current, IC (A) FIG.4 VCE(sat) - IC Base-to-Emitter Saturation Voltage, VBE(sat) (V)
10
Collector-to-Emitter Saturation Voltage, VCE(sat) (mV)
10000
IC / IB = 50
IC / IB = 50
1000
1.0
Ta=-25C
100
7 Ta=
5C
75C
25C
C -25
25C
10 0.01
Collector Current, IC (A) FIG.5 VCE(sat) - IC
0.1
1.0
10
0.1 0.01
Collector Current, IC (A) FIG.6 VBE(sat) - IC
0.1
1.0
10
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2SC5706
Gain-Bandwidth Product, fT - MHz Output Capacitance, Cob (pF)
1000 f = 1MHz 100 1000 VCE=10V
100
100
10
0.1
0.1
10
100
10
0.01
0.1
1.0
10
Collector-to-Base Voltage, VCB (V) FIG.7 Cob - VCB
100ms
Collector Current, IC (A) FIG.8 fT - IC
Collector Current, IC (A)
10
ICP = 7.5A
IC = 5A 1.0
DC
10ms 1ms 10
Collector Dissipation, PC (W)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160
No he at sin
DC
op
0
10 0 s
s
op
er
er
at
io
ati
n(
on
T
(T
c =2
a =2
5
0.1 TC = 25C Single Puls 0.01 0.1 1.0
5C
C)
k
)
10
100
Collector-to-Base Voltage, VCB (V) FIG.9 ASO
18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta (C) FIG.9 PC - Ta
Collector Dissipation, PC (W)
Case Temperature, TC (C) FIG.10 PC - TC
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2SC5706
D-PAK Outline Dimensions D-PAK(TO-252)
E A
4
unit:mm
D-PAK
G H J
Dim
A B C D E G H J K L M
Min
1
2
3
B
M D C L K
6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90
6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50
Max
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